Nanoscale Resistive Switching of a Copper-Carbon-Mixed Layer for Nonvolatile Memory Applications

• Published in: IEEE electron device letters 2009-03, Vol.30 (3), p.302-304
• Main Authors: Hyejung Choi, Myeongbum Pyun, Tae-Wook Kim, Hasan, M., Rui Dong, Joonmyoung Lee, Ju-Bong Park, Jaesik Yoon, Dong-jun Seong, Takhee Lee, Hyunsang Hwang
• Format: Article
• Language: English
• Subjects: Applied sciences; Cell array; Conducting materials; Copper; copper-carbon-mixed (Cu-C) layer; Design. Technologies. Operation analysis. Testing; Electronics; Energy consumption; Exact sciences and technology; Insulation; Integrated circuits; Integrated circuits by function (including memories and processors); Materials science and technology; Nonvolatile memory; Random access memory; resistance random access memory; resistive switching; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Solid state circuits; Temperature measurement; Voltage
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2008.2012273

The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area dependence of operation current. Based on these results and current-voltage dependence on temperature, we discussed a potential switching mechanism of Cu-C layer.