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Nanoscale Resistive Switching of a Copper-Carbon-Mixed Layer for Nonvolatile Memory Applications

The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow di...

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Published in:	IEEE electron device letters 2009-03, Vol.30 (3), p.302-304
Main Authors:	Hyejung Choi, Myeongbum Pyun, Tae-Wook Kim, Hasan, M., Rui Dong, Joonmyoung Lee, Ju-Bong Park, Jaesik Yoon, Dong-jun Seong, Takhee Lee, Hyunsang Hwang
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Language:	English
Subjects:	Applied sciences Cell array Conducting materials Copper copper-carbon-mixed (Cu-C) layer Design. Technologies. Operation analysis. Testing Electronics Energy consumption Exact sciences and technology Insulation Integrated circuits Integrated circuits by function (including memories and processors) Materials science and technology Nonvolatile memory Random access memory resistance random access memory resistive switching Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid state circuits Temperature measurement Voltage
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cited_by	cdi_FETCH-LOGICAL-c417t-149dc10ff308afb355a168216eaa00aff8cf3c978956ca9b39cda75262e0dca43
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container_title	IEEE electron device letters
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creator	Hyejung Choi Myeongbum Pyun Tae-Wook Kim Hasan, M. Rui Dong Joonmyoung Lee Ju-Bong Park Jaesik Yoon Dong-jun Seong Takhee Lee Hyunsang Hwang
description	The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. The Cu-C layer of the cross-point cell array showed typical filament switching with two orders of on/off ratio, exhibiting stable resistance switching and a narrow distribution of set and reset voltages in the nanoscale junction. In addition, we investigated the area dependence of operation current. Based on these results and current-voltage dependence on temperature, we discussed a potential switching mechanism of Cu-C layer.
doi_str_mv	10.1109/LED.2008.2012273
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subjects	Applied sciences Cell array Conducting materials Copper copper-carbon-mixed (Cu-C) layer Design. Technologies. Operation analysis. Testing Electronics Energy consumption Exact sciences and technology Insulation Integrated circuits Integrated circuits by function (including memories and processors) Materials science and technology Nonvolatile memory Random access memory resistance random access memory resistive switching Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid state circuits Temperature measurement Voltage
title	Nanoscale Resistive Switching of a Copper-Carbon-Mixed Layer for Nonvolatile Memory Applications
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