High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

Implantation-free mesa-etched 4H-SiC PiN diodes with a near-ideal breakdown voltage of 4.3 kV (about 80% of the theoretical value) were fabricated, measured, and analyzed by device simulation and optical imaging measurements at breakdown. The key step in achieving a high breakdown voltage is a contr...

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Bibliographic Details
Published in:IEEE electron device letters 2009-11, Vol.30 (11), p.1170-1172
Main Authors: Ghandi, R., Buono, B., Domeij, M., Malm, G., Zetterling, C.-M., Ostling, M.
Format: Article
Language:English
Subjects:
4H- hbox{SiC}
4H-SiC
Analytical models
Anodes
Applied sciences
Avalanche breakdown
Breakdown
Breakdown voltage
Devices
Diodes
Electric potential
Electroluminescent devices
Electronics
Etching
Exact sciences and technology
hbox{PiN} diode
Image analysis
Junction termination extension
Optical imaging
PiN diode
PIN diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Voltage
Voltage control
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Summary:Implantation-free mesa-etched 4H-SiC PiN diodes with a near-ideal breakdown voltage of 4.3 kV (about 80% of the theoretical value) were fabricated, measured, and analyzed by device simulation and optical imaging measurements at breakdown. The key step in achieving a high breakdown voltage is a controlled etching into the epitaxially grown p-doped anode layer to reach an optimum dopant dose of ~ 1.2 times 10 13 cm -2 in the junction termination extension (JTE). Electroluminescence revealed a localized avalanche breakdown that is in good agreement with device simulation. A comparison of diodes with single- and double-zone etched JTEs shows a higher breakdown voltage and a less sensitivity to varying processing conditions for diodes with a two-zone JTE.
ISSN:0741-3106
1558-0563
1558-0563
DOI:10.1109/LED.2009.2030374