Improved electrical and reliability characteristics of HfN-HfO2-Gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process

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Bibliographic Details
Published in:IEEE electron device letters 2005-04, Vol.26 (4), p.237-239
Main Authors: KANG, J. F, YU, H. Y, HAN, R. Q, KWONG, D.-L, REN, C, WANG, X. P, LI, M.-F, CHAN, D. S. H, YEO, Y.-C, SA, N, YANG, H, LIU, X. Y
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.845496