High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric

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Bibliographic Details
Published in:IEEE electron device letters 2005-06, Vol.26 (6), p.384-386
Main Authors: HUNG, B. F, CHIANG, K. C, HUANG, C. C, CHIN, Albert, MCALISTER, S. P
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.848622