High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric

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Published in:IEEE electron device letters 2005-06, Vol.26 (6), p.384-386
Main Authors: HUNG, B. F, CHIANG, K. C, HUANG, C. C, CHIN, Albert, MCALISTER, S. P
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 386
container_issue 6
container_start_page 384
container_title IEEE electron device letters
container_volume 26
creator HUNG, B. F
CHIANG, K. C
HUANG, C. C
CHIN, Albert
MCALISTER, S. P
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doi_str_mv 10.1109/LED.2005.848622
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1558-0563
language eng
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source IEEE Electronic Library (IEL) Journals
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric
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