10-GHz power performance of a type II InP/GaAsSb DHBT

Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) were fabricated and microwave power performance was measured. For an InP collector thickness of 150 nm, the DHBTs show a current gain of 24, low offset voltages, and a BV/sub CEO/>6V. The 1.2×16 μm 2 devices show f T =205GHz and...

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Bibliographic Details
Published in:IEEE electron device letters 2005-09, Vol.26 (9), p.604-606
Main Authors: Caruth, D.C., Chu-Kung, B.F., Milton Feng
Format: Article
Language:English
Subjects:
Applied sciences
Current density
DH-HEMTs
Electronics
Exact sciences and technology
Gallium arsenide
Heterojunction bipolar transistors
Heterojunction bipolar transistors (HBTs)
Indium gallium arsenide
Indium phosphide
Power amplifiers
Power generation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Transistors
Voltage
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Summary:Type-II InP/GaAsSb double heterojunction bipolar transistors (DHBTs) were fabricated and microwave power performance was measured. For an InP collector thickness of 150 nm, the DHBTs show a current gain of 24, low offset voltages, and a BV/sub CEO/>6V. The 1.2×16 μm 2 devices show f T =205GHz and f max =106GHz at J/sub C/=304 kA/cm 2 . These devices delivered 12.6 dBm to the load at P/sub AVS/=3.3 dBm operating at 10 GHz, yielding a power-added efficiency of 41% and G T =9.3 dB.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.854355