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A 32-KB Standard CMOS Antifuse One-Time Programmable ROM Embedded in a 16-bit Microcontroller

A 32-KB standard CMOS antifuse one-time programmable (OTP) ROM embedded in a 16-bit microcontroller as its program memory is designed and implemented in 0.18-mum standard CMOS technology. The proposed 32-KB OTP ROM cell array consists of 4.2 mum 2 three-transistor (3T) OTP cells where each cell util...

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Published in:	IEEE journal of solid-state circuits 2006-09, Vol.41 (9), p.2115-2124
Main Authors:	Hyouk-Kyu Cha, Ilhyun Yun, Jinbong Kim, Byeong-Cheol So, Kanghyup Chun, Nam, I., Kwyro Lee
Format:	Article
Language:	English
Subjects:	Antifuses Applied sciences Circuits CMOS CMOS antifuse CMOS OTP CMOS process CMOS technology Design. Technologies. Operation analysis. Testing Electric breakdown Electronics embedded PROM EPROM Exact sciences and technology gate-oxide breakdown Integrated circuits Integrated circuits by function (including memories and processors) microcontroller Microcontrollers Nonvolatile memory OTP ROM PROM Random access memory Read only memory Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Static random access memory Transistors
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container_issue	9
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container_title	IEEE journal of solid-state circuits
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creator	Hyouk-Kyu Cha Ilhyun Yun Jinbong Kim Byeong-Cheol So Kanghyup Chun Nam, I. Kwyro Lee
description	A 32-KB standard CMOS antifuse one-time programmable (OTP) ROM embedded in a 16-bit microcontroller as its program memory is designed and implemented in 0.18-mum standard CMOS technology. The proposed 32-KB OTP ROM cell array consists of 4.2 mum 2 three-transistor (3T) OTP cells where each cell utilizes a thin gate-oxide antifuse, a high-voltage blocking transistor, and an access transistor, which are all compatible with standard CMOS process. In order for high density implementation, the size of the 3T cell has been reduced by 80% in comparison to previous work. The fabricated total chip size, including 32-KB OTP ROM, which can be programmed via external I 2 C master device such as universal I 2 C serial EEPROM programmer, 16-bit microcontroller with 16-KB program SRAM and 8-KB data SRAM, peripheral circuits to interface other system building blocks, and bonding pads, is 9.9 mm 2 . This paper describes the cell, design, and implementation of high-density CMOS OTP ROM, and shows its promising possibilities in embedded applications
doi_str_mv	10.1109/JSSC.2006.880603
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This paper describes the cell, design, and implementation of high-density CMOS OTP ROM, and shows its promising possibilities in embedded applications</description><subject>Antifuses</subject><subject>Applied sciences</subject><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS antifuse</subject><subject>CMOS OTP</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Design. Technologies. Operation analysis. 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subjects	Antifuses Applied sciences Circuits CMOS CMOS antifuse CMOS OTP CMOS process CMOS technology Design. Technologies. Operation analysis. Testing Electric breakdown Electronics embedded PROM EPROM Exact sciences and technology gate-oxide breakdown Integrated circuits Integrated circuits by function (including memories and processors) microcontroller Microcontrollers Nonvolatile memory OTP ROM PROM Random access memory Read only memory Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Static random access memory Transistors
title	A 32-KB Standard CMOS Antifuse One-Time Programmable ROM Embedded in a 16-bit Microcontroller
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