High work function IrxSi gates on HfAlON p-MOSFETs

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Bibliographic Details
Published in:IEEE electron device letters 2006-02, Vol.27 (2), p.90-92
Main Authors: WU, C. H, YU, D. S, CHIN, Albert, WANG, S. J, LI, M.-F, ZHU, C, HUNG, B. F, MCALISTER, S. P
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.862687