High work function IrxSi gates on HfAlON p-MOSFETs

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Published in:IEEE electron device letters 2006-02, Vol.27 (2), p.90-92
Main Authors: WU, C. H, YU, D. S, CHIN, Albert, WANG, S. J, LI, M.-F, ZHU, C, HUNG, B. F, MCALISTER, S. P
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 92
container_issue 2
container_start_page 90
container_title IEEE electron device letters
container_volume 27
creator WU, C. H
YU, D. S
CHIN, Albert
WANG, S. J
LI, M.-F
ZHU, C
HUNG, B. F
MCALISTER, S. P
description
doi_str_mv 10.1109/LED.2005.862687
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source IEEE Electronic Library (IEL) Journals
subjects Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title High work function IrxSi gates on HfAlON p-MOSFETs
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