A single-sided PHINES SONOS memory featuring high-speed and low-power applications

A single-sided PHINES SONOS memory with hot-hole injection in program operation and Fowler-Nordheim (FN) tunneling in erase operation has been demonstrated for high program speed and low power applications. High programming speed (/spl Delta/V T /program time) of 5 V/20 μs, low power consumption of...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2006-02, Vol.27 (2), p.127-129
Main Authors: WU, Jau-Yi, LEE, Ming-Hsiu, HSU, Tzu-Hsuan, LUNG, Hsiang-Lan, LIU, Rich, LU, Chih-Yuan
Format: Article
Language:English
Subjects:
Applied sciences
CMOS technology
Design. Technologies. Operation analysis. Testing
Devices
Durability
Electronics
Electrons
Endurance
Energy consumption
Exact sciences and technology
Fabrication
Flash memory
Fowler-Nordheim (FN) erase
High speed
Hot carriers
hot-hole (HH) program
Integrated circuits
Integrated circuits by function (including memories and processors)
Lungs
nonvolatile flash memory (NFM)
Nonvolatile memory
PHINES
Power consumption
Programming
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SONOS
SONOS devices
Tunneling
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A single-sided PHINES SONOS memory with hot-hole injection in program operation and Fowler-Nordheim (FN) tunneling in erase operation has been demonstrated for high program speed and low power applications. High programming speed (/spl Delta/V T /program time) of 5 V/20 μs, low power consumption of P/E, high endurance of 10 K, good retention, and scaling capability can be demonstrated.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.863135