Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC

The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such a...

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Bibliographic Details
Published in:IEEE electron device letters 2006-04, Vol.27 (4), p.262-264
Main Authors: TU, Chun-Hao, CHANG, Ting-Chang, LIU, Po-Tsun, YANG, Che-Yu, LIU, Hsin-Chou, CHEN, Wei-Ren, WU, Yung-Chun, CHANG, Chun-Yen
Format: Article
Language:English
Subjects:
Applied sciences
Crystallization
Density
Deposition
Displays
Electric variables
Electronics
Exact sciences and technology
Excimer lasers
Fluorine
Fluorine ion implantation
Hydrogen
Ion implantation
Manufacturing
Microelectronic fabrication (materials and surfaces technology)
Oxides
Passivation
polycrystalline silicon thin-film transistors (poly-Si TFTs)
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Thin film transistors
Threshold voltage
Transistors
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Summary:The fluorine ion implantation applied to the polycrystalline silicon thin-film transistors (poly-Si TFTs) is investigated in this letter. Experimental results have shown that fluorine ion implantation effectively minimized the trap state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, and high ON/OFF current ratio. Furthermore, the fluorine ions tended to segregate at the interface between the gate oxide and poly-Si layers during the excimer laser annealing, even without the extra deposition of pad oxide on the poly-Si film. The presence of fluorine obviously enhanced electrical reliability of poly-Si TFTs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.870420