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Sub-500 °C solid-phase epitaxy of ultra-abrupt p+-silicon elevated contacts and diodes

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Bibliographic Details
Published in:	IEEE electron device letters 2006-05, Vol.27 (5), p.341-343
Main Authors:	CIVALE, Yann, NANVER, Lis K, HADLEY, Peter, GOUDENA, Egbert J. G, SCHELLEVIS, Hugo
Format:	Article
Language:	English
Subjects:	Applied sciences Compound structure devices Diodes Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online Access:	Get full text
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