Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices

• Published in: IEEE transactions on nuclear science 2006-12, Vol.53 (6), p.3203-3209
• Main Authors: Bongim Jun, Diestelhorst, R.M., Bellini, M., Espinel, G., Appaswamy, A., Prakash, A.P.G., Cressler, J.D., Dakai Chen, Schrimpf, R.D., Fleetwood, D.M., Turowski, M., Raman, A.
• Format: Article
• Language: English
• Subjects: CMOS; CMOS technology; Cooling; cryogenic; Cryogenics; Devices; Drains; Gates; Germanium silicon alloys; GIDL; Ionizing radiation; Leakage; Leakage current; off-state leakage current; Oxides; shallow trench isolation; Silicon germanium; Space technology; STI; Temperature; total dose radiation effects; Trenches; Tunneling; X-rays
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2006.886230

The off-state drain current leakage characteristics of 130 nm CMOS technology are investigated using x-ray irradiation and operating temperature as variables. Radiation-induced interface traps in the gate oxide to gate-drain overlap region strongly enhance the off-state leakage as a function of gate bias. Due to the thin gate oxide in these 130 nm devices, we find that drain-edge direct tunneling is more plausible than conventional gate-induced-drain-leakage in explaining the observed increase in drain leakage. Radiation-induced traps in the shallow trench isolation oxide create parasitic channels in the p-well and produce another source of off-state drain leakage with increasing total dose. The drain current increase from both the gate overlap region and the shallow trench edge are enhanced with increasing total dose and suppressed by cooling