Radiation Dose Effects in Trigate SOI MOS Transistors

N-channel trigate SOI MOSFETs have been irradiated with 60 Co gamma rays at doses up to 6 Mrad(SiO 2 ). The threshold voltage shift at 6 Mrad is less than 10 mV in transistors with a gate length of 0.3 mum. At 6 Mrad(SiO 2 ), the current drive reduction in the same devices is 10% if V G =0 V during...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2006-12, Vol.53 (6), p.3237-3241
Main Authors: Colinge, J. P., Orozco, A., Rudee, J., Xiong, Weize, Cleavelin, C. Rinn, Schulz, T., Schrufer, K., Knoblinger, G., Patruno, P.
Format: Article
Language:English
Subjects:
Degradation
Electron mobility
Electron traps
Fins
Gamma rays
Inversions
Irradiation
Metal oxide semiconductors
MOSFETs
Radiation hardening
semiconductor device radiation effects
Semiconductor devices
Semiconductor films
Silicon
Silicon on insulator technology
Threshold voltage
Transconductance
Transistors
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Summary:N-channel trigate SOI MOSFETs have been irradiated with 60 Co gamma rays at doses up to 6 Mrad(SiO 2 ). The threshold voltage shift at 6 Mrad is less than 10 mV in transistors with a gate length of 0.3 mum. At 6 Mrad(SiO 2 ), the current drive reduction in the same devices is 10% if V G =0 V during irradiation and 20% if V G =1 V during the irradiation. The generation of positive charges in the BOX increases the electron concentration at the bottom interface of the silicon fins. Inversion electrons at the bottom interface have a higher mobility than the electrons at the (110)-oriented fin sidewalls. As a result, an increase of transconductance with dose is observed at moderate doses [
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2006.885841