AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN

The authors fabricated SiN/AlN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) using SiN passivation by catalytic chemical vapor deposition (Cat-CVD). Cat-CVD SiN increased the electron density of AlN/GaN HFETs by compensating the surface depletion of the two-d...

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Bibliographic Details
Published in:IEEE electron device letters 2006-09, Vol.27 (9), p.719-721
Main Authors: Higashiwaki, M., Mimura, T., Matsui, T.
Format: Article
Language:English
Subjects:
AlN
Aluminum nitride
Applied sciences
catalytic chemical vapor deposition (Cat-CVD)
Chemical vapor deposition
Current density
current-gain cutoff frequency
Cutoff frequency
Depletion
Devices
Electron gas
Electronics
Electrons
Exact sciences and technology
Gallium nitride
Gallium nitrides
GaN
HEMTs
heterostructure field-effect transistor (HFET)
Insulation
maximum oscillation frequency
Metal-insulator structures
metal-insulator-semiconductor (MIS)
Microelectronic fabrication (materials and surfaces technology)
MODFETs
Oscillations
Passivation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon compounds
Transistors
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Summary:The authors fabricated SiN/AlN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs) using SiN passivation by catalytic chemical vapor deposition (Cat-CVD). Cat-CVD SiN increased the electron density of AlN/GaN HFETs by compensating the surface depletion of the two-dimensional electron gas. The MIS-HFETs had a maximum drain current density of 0.95 A/mm and a peak extrinsic transconductance of 211 mS/mm. A current-gain cutoff frequency of 107 GHz and maximum oscillation frequency of 171 GHz were obtained for the 60- and 70-nm-gate devices, respectively
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.881087