A 20-GHz low-noise amplifier with active balun in a 0.25-[micro]m SiGe BICMOS technology

To the authors' knowledge, the LNA delivers the lowest reported noise figure and highest linearity for a silicon implementation of a combined active balun and LNA at 20 GHz, and is the first implementation of an active balun with an LC degenerated emitter-coupled pair.

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2005-10, Vol.40 (10), p.2092
Main Authors: Welch, B, Kornegay, K.T, Park, Hyun-Min, Laskar, J
Format: Article
Language:English
Subjects:
Noise
Online Access:Get full text
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Description
Summary:To the authors' knowledge, the LNA delivers the lowest reported noise figure and highest linearity for a silicon implementation of a combined active balun and LNA at 20 GHz, and is the first implementation of an active balun with an LC degenerated emitter-coupled pair.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2005.854603