50-nm T-gate InAlAs/InGaAs metamorphic HEMTs with low noise and high fT characteristics

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Bibliographic Details
Published in:IEEE electron device letters 2007-07, Vol.28 (7), p.546-548
Main Authors: BYEONG OK LIM, MUN KYO LEE, TAE JONG BAEK, HAN, Min, SUNG CHAN KIM, RHEE, Jin-Koo
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.899442