Spacer-First Damascene-Gate FinFET Architecture Featuring Stringer-Free Integration

This letter presents a new Damascene-gate FinFET process that inherently suppresses stringers, resulting from gate and spacers patterning. The so-called spacer-first integration scheme relies on the engineering of a hydrogen silsesquioxane layer by electron beam lithography followed by two selective...

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Bibliographic Details
Published in:IEEE electron device letters 2007-06, Vol.28 (6), p.523-526
Main Authors: Cornu-Fruleux, F., Penaud, J., Dubois, E., Coronel, P., Larrieu, G., Skotnicki, T.
Format: Article
Language:English
Subjects:
Applied sciences
Contact
Contacts
Dielectric substrates
Drains
Electric contacts
Electron beam lithography
Electron beams
Electronics
Electrostatics
Engineering Sciences
Etching
Exact sciences and technology
FinFET
FinFETs
Fins
Gates
Holes
Hydrogen
hydrogen silsesquioxane (HSQ)
Interfaces
Lithography
Microelectronic fabrication (materials and surfaces technology)
multiple gate
Schottky barrier
Schottky barriers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Spacers
Surface resistance
Transistors
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Summary:This letter presents a new Damascene-gate FinFET process that inherently suppresses stringers, resulting from gate and spacers patterning. The so-called spacer-first integration scheme relies on the engineering of a hydrogen silsesquioxane layer by electron beam lithography followed by two selective compartmentalized development steps to successively release the Damascene-gate cavity and the source/drain (S/D) contact regions. In contrast to the existing gate-first and gate-last integration approaches, the resulting FinFET process does not impose any restriction or interdependency on the sizing of the fins, gate, spacers, and S/D regions. A complete morphological and electrical validation is proposed in the particular case of wrap-around self-aligned metallic Schottky S/D contacts.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.897443