Enhancement-Mode GaAs MOSFETs With an In0.3 Ga0.7As Channel, a Mobility of Over 5000 cm2/V ·s, and Transconductance of Over 475 [mu]S/[mu]m

Typical 1-mum gate length device figures of merit are given as follows: saturation drive current, Id,sat = 407 muA/mum; threshold voltage, Vt = +0.26 V; maximum extrinsic transconductance, gm = 477 muS/mum (the highest reported to date for a III-V MOSFET); gate leakage current, Ig = 30 pA; subthresh...

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Bibliographic Details
Published in:IEEE electron device letters 2007-12, Vol.28 (12), p.1080
Main Authors: Hill, R.J.W, Moran, D.A.J, Li, Xu, Zhou, Haiping, Macintyre, D, Thoms, S, Asenov, A, Zurcher, P, Rajagopalan, K, Abrokwah, J, Droopad, R, Passlack, M, Thayne, I.G
Format: Article
Language:English
Subjects:
Semiconductors
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Summary:Typical 1-mum gate length device figures of merit are given as follows: saturation drive current, Id,sat = 407 muA/mum; threshold voltage, Vt = +0.26 V; maximum extrinsic transconductance, gm = 477 muS/mum (the highest reported to date for a III-V MOSFET); gate leakage current, Ig = 30 pA; subthreshold swing, S = 102 mV/dec; on resistance, Ron = 1920 Omega-mum; Ion/Ioff ratio = 6.3 x 104; and output conductance, gd = 11 mS/mm.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.910009