High-current-gain InP/GaInP/GaAsSb/InP DHBTs with fT = 436 GHz

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2007-10, Vol.28 (10), p.852-855
Main Authors: LIU, H. G, OSTINELLI, O, ZENG, Y. P, BOLOGNESI, C. R
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.905461