A Novel Four-Mask-Step Low-Temperature Polysilicon Thin-Film Transistor With Self-Aligned Raised Source/Drain (SARSD)

In this letter, a novel structure of polycrystalline-silicon thin-film transistors (TFTs) with self-aligned raised source/drain (SARSD) and a thin channel has been developed and investigated. In the proposed structure, a thick SD and a thin active region could be achieved with only four mask steps,...

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Bibliographic Details
Published in:IEEE electron device letters 2007-01, Vol.28 (1), p.39-41
Main Authors: Kow Ming Chang, Gin Min Lin, Cheng Guo Chen, Hsieh, M.F.
Format: Article
Language:English
Subjects:
Applied sciences
Channels
Chemical vapor deposition
Devices
Drains
Electric resistance
Electroluminescent devices
Electronics
Etching
Exact sciences and technology
Fabrication
Four masks
Glass
Leakage current
Liquid crystal displays
Masks
on / off current ratio
polycrystalline-silicon thin-film transistor (poly-Si TFT)
self-aligned raised source/drain (SARSD)
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
thin channel
Thin film transistors
Transistors
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Description
Summary:In this letter, a novel structure of polycrystalline-silicon thin-film transistors (TFTs) with self-aligned raised source/drain (SARSD) and a thin channel has been developed and investigated. In the proposed structure, a thick SD and a thin active region could be achieved with only four mask steps, which are less than that in conventional raised SD TFTs. The proposed SARSD TFT has a higher on-state current and a lower off-state leakage current. Moreover, the on/off current ratio of the proposed SARSD TFT is also higher than that of a conventional coplanar TFT
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.887933