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An Unassisted, Low Trigger-, and High Holding-Voltage SCR (uSCR) for On-Chip ESD-Protection Applications

A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-mum/3.3-V fully salicided BiCMOS process for electrostatic-discharge (ESD) applications. Without using an external trigger circuitry, the unassisted SCR has a trigger voltage as low as 7 V to effectively protect deep-submicr...

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Published in:	IEEE electron device letters 2007-12, Vol.28 (12), p.1120-1122
Main Authors:	Lifang Lou, Liou, J.J.
Format:	Article
Language:	English
Subjects:	Applied sciences BiCMOS integrated circuits Breakdown voltage Circuits Current density Design engineering Devices Electric potential Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Electrostatic discharge Electrostatic discharge (ESD) Exact sciences and technology high holding voltage Latch-up low trigger voltage Low voltage Metal oxide semiconductors Protection Rectifiers Robustness silicon-controlled rectifier (SCR) Thyristors Voltage
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container_issue	12
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container_title	IEEE electron device letters
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creator	Lifang Lou Liou, J.J.
description	A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-mum/3.3-V fully salicided BiCMOS process for electrostatic-discharge (ESD) applications. Without using an external trigger circuitry, the unassisted SCR has a trigger voltage as low as 7 V to effectively protect deep-submicrometer MOS circuits, a holding voltage higher than the supply voltage to minimize transient influence and avoid latch-up issue, and a second snapback current density exceeding 60 mA/mum to provide robust ESD-protection solutions.
doi_str_mv	10.1109/LED.2007.909838
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source	IEEE Xplore (Online service)
subjects	Applied sciences BiCMOS integrated circuits Breakdown voltage Circuits Current density Design engineering Devices Electric potential Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Electrostatic discharge Electrostatic discharge (ESD) Exact sciences and technology high holding voltage Latch-up low trigger voltage Low voltage Metal oxide semiconductors Protection Rectifiers Robustness silicon-controlled rectifier (SCR) Thyristors Voltage
title	An Unassisted, Low Trigger-, and High Holding-Voltage SCR (uSCR) for On-Chip ESD-Protection Applications
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