Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode

We have fabricated high-kappa TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 times 10 -7 A/cm 2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-...

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Bibliographic Details
Published in:IEEE electron device letters 2007-12, Vol.28 (12), p.1095-1097
Main Authors: Cheng, C.H., Pan, H.C., Yang, H.J., Hsiao, C.N., Chou, C.P., McAlister, S.P., Chin, A.
Format: Article
Language:English
Subjects:
Capacitance
Capacitors
Conduction band
Current measurement
Density
Devices
Dielectric devices
Dielectrics
Electrodes
High- kappa
Iridium
Leakage current
metal-insulator-metal (MIM)
MIM capacitors
MIM devices
Plasma measurements
Surface resistance
Temperature
TiLaO
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Summary:We have fabricated high-kappa TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 times 10 -7 A/cm 2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.909612