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Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode
We have fabricated high-kappa TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 times 10 -7 A/cm 2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-...
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| Published in: | IEEE electron device letters 2007-12, Vol.28 (12), p.1095-1097 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c457t-6237c18d8f4f7bc152cf1435ace1aa76d3be4fe7dfaec4024b4151e083f940b13 |
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| cites | cdi_FETCH-LOGICAL-c457t-6237c18d8f4f7bc152cf1435ace1aa76d3be4fe7dfaec4024b4151e083f940b13 |
| container_end_page | 1097 |
| container_issue | 12 |
| container_start_page | 1095 |
| container_title | IEEE electron device letters |
| container_volume | 28 |
| creator | Cheng, C.H. Pan, H.C. Yang, H.J. Hsiao, C.N. Chou, C.P. McAlister, S.P. Chin, A. |
| description | We have fabricated high-kappa TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 times 10 -7 A/cm 2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset. |
| doi_str_mv | 10.1109/LED.2007.909612 |
| format | article |
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A low leakage current of 6.6 times 10 -7 A/cm 2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2007.909612</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitance ; Capacitors ; Conduction band ; Current measurement ; Density ; Devices ; Dielectric devices ; Dielectrics ; Electrodes ; High- kappa ; Iridium ; Leakage current ; metal-insulator-metal (MIM) ; MIM capacitors ; MIM devices ; Plasma measurements ; Surface resistance ; Temperature ; TiLaO</subject><ispartof>IEEE electron device letters, 2007-12, Vol.28 (12), p.1095-1097</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c457t-6237c18d8f4f7bc152cf1435ace1aa76d3be4fe7dfaec4024b4151e083f940b13</citedby><cites>FETCH-LOGICAL-c457t-6237c18d8f4f7bc152cf1435ace1aa76d3be4fe7dfaec4024b4151e083f940b13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4383533$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,54794</link.rule.ids></links><search><creatorcontrib>Cheng, C.H.</creatorcontrib><creatorcontrib>Pan, H.C.</creatorcontrib><creatorcontrib>Yang, H.J.</creatorcontrib><creatorcontrib>Hsiao, C.N.</creatorcontrib><creatorcontrib>Chou, C.P.</creatorcontrib><creatorcontrib>McAlister, S.P.</creatorcontrib><creatorcontrib>Chin, A.</creatorcontrib><title>Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We have fabricated high-kappa TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 times 10 -7 A/cm 2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.</description><subject>Capacitance</subject><subject>Capacitors</subject><subject>Conduction band</subject><subject>Current measurement</subject><subject>Density</subject><subject>Devices</subject><subject>Dielectric devices</subject><subject>Dielectrics</subject><subject>Electrodes</subject><subject>High- kappa</subject><subject>Iridium</subject><subject>Leakage current</subject><subject>metal-insulator-metal (MIM)</subject><subject>MIM capacitors</subject><subject>MIM devices</subject><subject>Plasma measurements</subject><subject>Surface resistance</subject><subject>Temperature</subject><subject>TiLaO</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp9kTFPwzAQhS0EEqUwM7BYDDCl9cV2nIyoLVApFUuZLce5FEObBDtF6r8nEMTAwHA66e57T3p6hFwCmwCwbJov5pOYMTXJWJZAfERGIGUaMZnwYzJiSkDEgSWn5CyEV8ZACCVGpF3uWt98YEkf3eYlWuOuRW-6vUeao3kzG6SuHn5zrIPrDnS1XNGZaY11XeMDLQ70Obh6Qw1du9w80bnDLdrOO0tNXfZDl54uvk9NiefkpDLbgBc_e0ye7xfr2WOUPz0sZ3d5ZIVUXZTEXFlIy7QSlSosyNhWILg0FsEYlZS8QFGhKiuDVrBYFAIkIEt5lQlWAB-T28G3j_e-x9DpnQsWt1tTY7MPOk1ZksSxUj158y_JhWQik6IHr_-Ar83e130KnUEMGZffbtMBsr4JwWOlW-92xh80MP1VlO6L0l9F6aGoXnE1KBwi_tKCp1xyzj8BE7yNWA</recordid><startdate>20071201</startdate><enddate>20071201</enddate><creator>Cheng, C.H.</creator><creator>Pan, H.C.</creator><creator>Yang, H.J.</creator><creator>Hsiao, C.N.</creator><creator>Chou, C.P.</creator><creator>McAlister, S.P.</creator><creator>Chin, A.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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A low leakage current of 6.6 times 10 -7 A/cm 2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2007.909612</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2007-12, Vol.28 (12), p.1095-1097 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_journals_912193577 |
| source | IEEE Electronic Library (IEL) Journals |
| subjects | Capacitance Capacitors Conduction band Current measurement Density Devices Dielectric devices Dielectrics Electrodes High- kappa Iridium Leakage current metal-insulator-metal (MIM) MIM capacitors MIM devices Plasma measurements Surface resistance Temperature TiLaO |
| title | Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode |
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