A Statistical Model for Simulating the Effect of LTPS TFT Device Variation for SOP Applications

In this paper, the variation characteristics of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are investigated with a statistical approach. A special layout is proposed to investigate the device variation with respect to various devices distances. Two non-Gaussian equat...

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Bibliographic Details
Published in:Journal of display technology 2007-12, Vol.3 (4), p.426-433
Main Authors: Tai, Ya-Hsiang, Huang, Shih-Che, Chen, Wan-Ping, Chao, Yu-Te, Chou, Yen-Pang, Peng, Guo-Feng
Format: Article
Language:English
Subjects:
Analog circuits
Chaos
Circuits
Devices
Digital circuits
Display devices
Displays
Gaussian distribution
Glass
Integrated circuit reliability
Mathematical analysis
Mathematical models
Poly-Si thin-film transistor (TFT)
Semiconductor devices
Silicon
statistical model
Switches
Thin film transistors
variation
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Summary:In this paper, the variation characteristics of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are investigated with a statistical approach. A special layout is proposed to investigate the device variation with respect to various devices distances. Two non-Gaussian equations are proposed to fit the device parameter distributions, whose the coefficients of determination (R 2 ) are both near 0.9, reflecting the validity of the model. Two benchmark circuits are used to compare the difference between the proposed model and the conventional Gaussian distribution for the device parameter distribution. The output behaviors of the digital and analog circuits show that the variation in the short range would greatly affect the performance of the analog circuits and would instead be averaged in the digital circuits.
ISSN:1551-319X
1558-9323
DOI:10.1109/JDT.2007.903155