Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors

AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a s...

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Bibliographic Details
Published in:IEEE electron device letters 2008-04, Vol.29 (4), p.300-302
Main Authors: Pei, Y., Chu, R., Shen, L., Fichtenbaum, N.A., Chen, Z., Brown, D., Keller, S., Denbaars, S.P., Mishra, U.K.
Format: Article
Language:English
Subjects:
Al composition
Aluminum
Aluminum gallium nitride
Applied sciences
Density
Devices
Electronics
Electrons
Etching
Exact sciences and technology
Frequency
Gallium nitride
Gallium nitrides
Gate leakage
gate recess
Gates
HEMTs
high-electron mobility transistor (HEMT)
Leakage
Leakage current
MODFETs
power
Recesses
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Senior members
Transistors
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Summary:AlGaN/GaN high-electron mobility transistors with different Al compositions and barrier thicknesses were compared. The samples with higher Al composition and similar 2D electron gas density showed higher gate leakage, utilizing a slant field plate gate process. By applying a gate recess etch and a slant field plate gate process, gate leakage was improved to a similar level for all the devices, and the power density and PAE were much improved.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.917936