PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD-SiNx Stressing Layer

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Bibliographic Details
Published in:IEEE electron device letters 2008, Vol.29 (1), p.86-88
Main Authors: LIAO, Wen-Shiang, LIAW, Yue-Gie, TANG, Mao-Chyuan, CHEN, Kun-Ming, HUANG, Sheng-Yi, PENG, C.-Y, CHEE WEE LIU
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.910794