PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD-SiNx Stressing Layer

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Published in:IEEE electron device letters 2008, Vol.29 (1), p.86-88
Main Authors: LIAO, Wen-Shiang, LIAW, Yue-Gie, TANG, Mao-Chyuan, CHEN, Kun-Ming, HUANG, Sheng-Yi, PENG, C.-Y, CHEE WEE LIU
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 88
container_issue 1
container_start_page 86
container_title IEEE electron device letters
container_volume 29
creator LIAO, Wen-Shiang
LIAW, Yue-Gie
TANG, Mao-Chyuan
CHEN, Kun-Ming
HUANG, Sheng-Yi
PENG, C.-Y
CHEE WEE LIU
description
doi_str_mv 10.1109/LED.2007.910794
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source IEEE Xplore (Online service)
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD-SiNx Stressing Layer
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