Analysis of Proton and Heavy-Ion Irradiation Effects on Phase Change Memories With MOSFET and BJT Selectors

We study proton and heavy ion irradiation effects on phase change memories (PCM) with MOSFET and BJT selectors and the effect of the irradiation on the retention characteristics of these devices. Proton irradiation produces noticeable variations in the cell distributions in PCM with MOSFET selectors...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.3189-3196
Main Authors: Gasperin, A., Paccagnella, A., Schwank, J.R., Vizkelethy, G., Ottogalli, F., Pellizzer, F.
Format: Article
Language:English
Subjects:
Accelerated tests
Amorphous materials
Chalcogenide material
CMOS technology
Devices
Flash memory
GST
heavy ions
Irradiation
Laboratories
Leakage current
MOSFET circuits
MOSFETs
non-volatile memories
Phase change
Phase change materials
phase change memories (PCM)
Phase change memory
Phased arrays
Proton irradiation
Protons
radiation effects
Selectors
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Summary:We study proton and heavy ion irradiation effects on phase change memories (PCM) with MOSFET and BJT selectors and the effect of the irradiation on the retention characteristics of these devices. Proton irradiation produces noticeable variations in the cell distributions in PCM with MOSFET selectors mostly due to leakage currents affecting the transistors. PCM with BJT selectors show only small variations after proton irradiation. PCM cells do not appear to be impacted by heavy-ion irradiation. Using high temperature accelerated retention tests, we demonstrate that the retention capability of these memories is not compromised by the irradiation.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2008.2007639