Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT

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Bibliographic Details
Published in:IEEE electron device letters 2008-03, Vol.29 (3), p.209-211
Main Authors: ROMERO, M. F, JIMENEZ, A, MIGUEL-SANCHEZ, J, BRANA, A. F, GONZALEZ-POSADA, F, CUERDO, R, CALLE, F, MUNOZ, E
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.915568