Anomalous Electron Storage Decrease in MONOS' Nitride Layers Thinner Than 4 nm

An anomalous decrease in electron-storage capability of metal-oxide-nitride-oxide-silicon (MONOS) was observed in the range of nitride thickness below 4 nm. This decrease can be explained by assuming transition layers with electron traps at oxide/nitride interfaces or inhomogeneous growth of nitride...

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Bibliographic Details
Published in:IEEE electron device letters 2008-08, Vol.29 (8), p.920-922
Main Authors: Ishida, T., Mine, T., Hisamoto, D., Shimamoto, Y., Yamada, R.
Format: Article
Language:English
Subjects:
Applied sciences
Avalanche injection
Design. Technologies. Operation analysis. Testing
Devices
Electron emission
electron trap
Electron traps
Electronics
Exact sciences and technology
Flash memory
hbox{Si}_{3}\hbox{N}_{4}
Integrated circuits
Integrated circuits by function (including memories and processors)
Laboratories
metal-oxide-nitride-oxide-silicon (MONOS)
MONOS devices
nitride
Nitrides
Nonvolatile memory
Oxides
Roughness
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Solvents
SONOS
SONOS devices
Substrates
Transition layers
Voltage
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Summary:An anomalous decrease in electron-storage capability of metal-oxide-nitride-oxide-silicon (MONOS) was observed in the range of nitride thickness below 4 nm. This decrease can be explained by assuming transition layers with electron traps at oxide/nitride interfaces or inhomogeneous growth of nitride in the early stage of the growth. To decrease the nitride thickness of a MONOS memory below 4 nm for lower power operation and further device scaling down, transition layer should be thinned, or nitride roughness should be reduced.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2001122