High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer

A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/ mum for n-channel and 1.30 mA/ mum for p-channel TSNWFETs with mid-gap TiN metal gate that are normalized by a n...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2008-03, Vol.7 (2), p.181-184
Main Authors: Suk, Sung Dae, Yeo, Kyoung Hwan, Cho, Keun Hwi, Li, Ming, Yeoh, Yun Young, Lee, Sung-Young, Kim, Sung Min, Yoon, Eun Jung, Kim, Min Sang, Oh, Chang Woo, Kim, Sung Hwan, Kim, Dong-Won, Park, Donggun
Format: Article
Language:English
Subjects:
5 nm
Annealing
Bulk MOSFET
Channels
Etching
gate all around (GAA)
Gates
Germanium silicon alloys
high performance
Hydrogen
MOSFET
MOSFET circuits
MOSFETs
Nanocomposites
Nanomaterials
Nanostructure
nanowire
Nanowires
Shape
Silicon
Silicon compounds
Silicon germanium
Tin
Transistors
TSNWFET
twin silicon nanowire
Wafers
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Summary:A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/ mum for n-channel and 1.30 mA/ mum for p-channel TSNWFETs with mid-gap TiN metal gate that are normalized by a nanowire diameter. It also shows good short-channel effects immunity down to 30-nm gate length due to the GAA structure and the nanowire channel. The effect of bottom parasitic transistor in TSNWFET is also investigated.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2008.917843