Enhanced Light Extraction by Photonic Quasi-Crystals in GaN Blue LEDs

The far-field profile of photonic quasi-crystal patterned and unpatterned LEDs, fabricated from commercial epitaxial substrates by electron beam lithography, has been measured prior to lapping and dicing. Emission enhancements reach a maximum of 62%, and are strongly dependent on the filling factor....

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2009-07, Vol.15 (4), p.1269-1274
Main Authors: Shields, P.A., Charlton, M., Lee, T., Zoorob, M.E., Allsopp, D.W.E., Wang, W.N.
Format: Article
Language:English
Subjects:
Crystalline materials
Data mining
Electroluminescence
Electron beam lithography
Emission
Epitaxial growth
extraction
Filling
Finite difference method
Gallium nitride
Gallium nitrides
Lapping
LEDs
Light emitting diodes
Lithography
Mathematical analysis
Optical waveguides
Photonic crystals
Photonics
Quantum electronics
Substrates
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Summary:The far-field profile of photonic quasi-crystal patterned and unpatterned LEDs, fabricated from commercial epitaxial substrates by electron beam lithography, has been measured prior to lapping and dicing. Emission enhancements reach a maximum of 62%, and are strongly dependent on the filling factor. Qualitative agreement is achieved between 2-D finite-difference time-domain calculations and the experimental data.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2009.2016674