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Enhanced Light Extraction by Photonic Quasi-Crystals in GaN Blue LEDs

The far-field profile of photonic quasi-crystal patterned and unpatterned LEDs, fabricated from commercial epitaxial substrates by electron beam lithography, has been measured prior to lapping and dicing. Emission enhancements reach a maximum of 62%, and are strongly dependent on the filling factor....

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Published in:	IEEE journal of selected topics in quantum electronics 2009-07, Vol.15 (4), p.1269-1274
Main Authors:	Shields, P.A., Charlton, M., Lee, T., Zoorob, M.E., Allsopp, D.W.E., Wang, W.N.
Format:	Article
Language:	English
Subjects:	Crystalline materials Data mining Electroluminescence Electron beam lithography Emission Epitaxial growth extraction Filling Finite difference method Gallium nitride Gallium nitrides Lapping LEDs Light emitting diodes Lithography Mathematical analysis Optical waveguides Photonic crystals Photonics Quantum electronics Substrates
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description	The far-field profile of photonic quasi-crystal patterned and unpatterned LEDs, fabricated from commercial epitaxial substrates by electron beam lithography, has been measured prior to lapping and dicing. Emission enhancements reach a maximum of 62%, and are strongly dependent on the filling factor. Qualitative agreement is achieved between 2-D finite-difference time-domain calculations and the experimental data.
doi_str_mv	10.1109/JSTQE.2009.2016674
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subjects	Crystalline materials Data mining Electroluminescence Electron beam lithography Emission Epitaxial growth extraction Filling Finite difference method Gallium nitride Gallium nitrides Lapping LEDs Light emitting diodes Lithography Mathematical analysis Optical waveguides Photonic crystals Photonics Quantum electronics Substrates
title	Enhanced Light Extraction by Photonic Quasi-Crystals in GaN Blue LEDs
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