Optimizing the Operation of Terahertz Silicon Lasers

In this paper, a thorough characterization of terahertz silicon lasers with respect to doping concentration and operation temperature has been carried out. Several factors limiting the laser operation, such as heating of the laser crystal and absorption by photoinduced free carriers, are discussed....

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2009-05, Vol.15 (3), p.925-932
Main Authors: Pavlov, S.G., Hubers, H.-W., Bottger, U., Zhukavin, R.Kh, Tsyplenkov, V.V., Kovalevsky, K.A., Shastin, V.N.
Format: Article
Language:English
Subjects:
Absorption
Constraining
Crystals
Doping
Geometrical optics
Heating
Laser excitation
Lasers
Optimization
Phonons
Power generation
Power lasers
Pump lasers
Pumps
Quantum electronics
Silicon
silicon (Si)
stimulated emission
Temperature
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Summary:In this paper, a thorough characterization of terahertz silicon lasers with respect to doping concentration and operation temperature has been carried out. Several factors limiting the laser operation, such as heating of the laser crystal and absorption by photoinduced free carriers, are discussed. The optimal doping concentration has been determined. The influence of the pump geometry on the laser efficiency has been investigated. It was found that an external uniaxial force applied to the laser crystal lowers the pump threshold and increases the output power.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2008.2011492