Mobility and Effective Electric Field in Nonplanar Channel MOSFETs

• Published in: IEEE transactions on nanotechnology 2009-01, Vol.8 (1), p.106-110
• Main Authors: JEONG, Min-Kyu, LEE, Jong-Ho
• Format: Article
• Language: English
• Subjects: Applied sciences; Bulk density; Channels; Charge density; Doping; Drains; Effective field; effective mobility; Electric fields; Electric wire; Electronics; Exact sciences and technology; FinFETs; Gaussian channels; Immune system; Information technology; MOSFETs; Nanotechnology; nonplanar channel (NPC) mosfet s; Scalability; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon on insulator technology; Transistors; universal relationship; Voltage; Wire
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2008.2007818

The universal relationship of effective carrier mobility (mu eff ) versus effective perpendicular electric field ( E eff ) in the channel was studied in nonplanar channel (NPC) mosfets. In general, E eff is determined by bulk charge density ( Q B ), inversion charge density ( Q i ), and eta . The variable eta was shown to have a dependence on channel structure and was extracted from several NPC mosfets, such as pure double-gate (DG), gate-all-around (GAA), and silicon-on-insulator (SOI) Fin mosfet s. We derived E eff expressions for the NPC mosfets for a given channel doping concentration. It was shown that large parasitic source/drain (S/D) resistance should be corrected to obtain accurate mu eff . In the GAA structure, extracted eta decreased with increasing radius of the body wire. Width weight sum was applied to extract eta in the SOI FinFETs that consist of DG and GAA structures. From the mu eff versus E eff relation obtained by the C- V method, we could verify the validity of our approach.