A Light-Impact Model for p-Type and n-Type Poly-Si TFTs

This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (I d ) over the dark current (I dark ) is calculated. The new model has been also impl...

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Bibliographic Details
Published in:Journal of display technology 2009-07, Vol.5 (7), p.265-272
Main Authors: Papadopoulos, N.P., Hatzopoulos, A.A., Papakostas, D.K., Picos, R., Dimitriadis, C.A., Siskos, S.
Format: Article
Language:English
Subjects:
Circuit simulation
Circuits
Computer simulation
Dark current
Display devices
Electric potential
Electron traps
Grain boundaries
I - V modeling
impact
influence
Laboratories
Length measurement
Light
Lighting
Mathematical model
n-type
optical
p-type
polysilicon thin-film transistors (poly-Si TFTs)
Semiconductor devices
Semiconductor process modeling
SPICE
Thin film transistors
Voltage
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Summary:This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (I d ) over the dark current (I dark ) is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the V ds and V gs voltages and of light intensities.
ISSN:1551-319X
1558-9323
DOI:10.1109/JDT.2009.2015898