A Study of Parasitic Series Resistance Components in In-Ga-Zn-Oxide (a-IGZO) Thin-Film Transistors

We extracted the effective channel length and parasitic series resistance in a-IGZO inverted-staggered etch-stop (ES) TFTs. When there is an overlap between the drain or source electrode and the FET channel, the resistance of the channel underneath the overlapping regions is very low compared with o...

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Bibliographic Details
Published in:IEEE electron device letters 2011-04, Vol.32 (4), p.503-505
Main Authors: Kondratyuk, R I, Kiju Im, Stryakhilev, D, Chaun Gi Choi, Mu-Gyeom Kim, Huiwon Yang, HyeHyang Park, Yeon Gon Mo, Hye Dong Kim, Sang Soo Kim
Format: Article
Language:English
Subjects:
Amorphous silicon
Channels
Devices
Drains
Effective channel length
Electrodes
Etching
IGZO
Logic gates
MOSFET circuits
parasitic series resistance
Resistance
Semiconductor devices
TFT
Thin film transistors
Transistors
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Summary:We extracted the effective channel length and parasitic series resistance in a-IGZO inverted-staggered etch-stop (ES) TFTs. When there is an overlap between the drain or source electrode and the FET channel, the resistance of the channel underneath the overlapping regions is very low compared with other channel region resistance. As a result, the effective channel length is smaller than the physical length. The aforementioned definition of effective channel length in terms of device geometric parameters seems to be specific for ES a-IGZO TFTs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2104937