Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- [Formula Omitted]/Metal-Gate nFinFETs for High-Performance Logic Applications

• Published in: IEEE electron device letters 2011-06, Vol.32 (6), p.713
• Main Authors: Maitra, Kingsuk, Khakifirooz, Ali, Kulkarni, Pranita, Basker, Veeraraghavan S, Faltermeier, Jonathan, Jagannathan, Hemanth, Adhikari, Hemant, Yeh, Chun-Chen, Klymko, Nancy R, Saenger, Katherine, Standaert, Theodorus, Miller, Robert J, Doris, Bruce, Paruchuri, Vamsi K, McHerron, Dale, O'Neil, James, Leobundung, Effendi, Bu, Huiming
• Format: Article
• Language: English
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2126556

Strained-silicon-on-insulator (SSOI) undoped-body high-[Formula Omitted]/metal-gate n-channel fin-shaped field-effect transistors (nFinFETs) at scaled gate lengths and pitches (i.e., [Formula Omitted] and a contacted gate pitch of 130 nm) were fabricated using a gate-first flow. A "long and narrow" fin layout (i.e., fin length [Formula Omitted]) was leveraged to preserve uniaxial tensile strain in the transistors. These devices exhibit drive currents suitable for high-performance logic technology. The change in the slope of [Formula Omitted], transconductance [Formula Omitted], and injection velocity [Formula Omitted] measurements indicate a [Formula Omitted]15% mobility-induced [Formula Omitted] enhancement with SSOI relative to SOI nFinFETs at ultrashort gate lengths. Raman measurements conducted on SSOI substrates after fin formation demonstrate the preservation of [Formula Omitted]1.3-GPa uniaxial tensile strain even after 1100 [Formula Omitted] annealing.