On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs

This letter systematically investigates the origin of gate-induced floating-body effect (GIFBE) in partially depleted silicon-on-insulator p-type MOSFETs. The experimental results indicate that GIFBE causes a reduction in the electrical oxide field, leading to an underestimate of negative-bias tempe...

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Published in:IEEE electron device letters 2011-07, Vol.32 (7), p.847-849
Main Authors: Chih-Hao Dai, Ting-Chang Chang, An-Kuo Chu, Yuan-Jui Kuo, Fu-Yen Jian, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Wan-Lin Chung, Jou-Miao Shih, Guangrui Xia, Cheng, Osbert, Cheng-Tung Huang
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Language:English
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Summary:This letter systematically investigates the origin of gate-induced floating-body effect (GIFBE) in partially depleted silicon-on-insulator p-type MOSFETs. The experimental results indicate that GIFBE causes a reduction in the electrical oxide field, leading to an underestimate of negative-bias temperature instability degradation. This can be partially attributed to the electrons tunneling from the process-induced partial n + polygate. However, based on different operation conditions, we found that the dominant origin of electrons was strongly dependent on holes in the inversion layer under source/drain grounding. This suggests that the mechanism of GIFBE at higher voltages is dominated by the proposed anode electron injection model, rather than the electron valence band tunneling widely accepted as the mechanism for n-MOSFETs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2142412