Performance of Localized-SOI MOS Devices on (110) Substrates: Impact of Channel Direction

In this letter, we demonstrate the optimization of localized silicon-on-insulator and the functionality of devices on (110) silicon substrates. The influence of several channel directions (i.e., 15 ° , 30 ° , 45 ° , and 60 ° away from the [001] direction) on both hole mobility and electron mobility...

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Bibliographic Details
Published in:IEEE electron device letters 2011-08, Vol.32 (8), p.996-998
Main Authors: Huguenin, J.-L, Monfray, S., Hartmann, J.-M, Destefanis, V., Delaye, V., Samson, M.-P, Boulitreau, P., Morand, Y., Brianceau, P., Arvet, C., Gautier, P., Skotnicki, T., Ghibaudo, G., Boeuf, F.
Format: Article
Language:English
Subjects:
Applied sciences
Channel directions
Channels
Compound structure devices
Devices
Electron mobility
Electronics
epitaxy
Exact sciences and technology
Fabrication
Hole mobility
localized silicon-on-insulator (LSOI)
Logic gates
mobility
MOS devices
Optimization
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Silicon substrates
substrate
Substrates
Transistors
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Summary:In this letter, we demonstrate the optimization of localized silicon-on-insulator and the functionality of devices on (110) silicon substrates. The influence of several channel directions (i.e., 15 ° , 30 ° , 45 ° , and 60 ° away from the [001] direction) on both hole mobility and electron mobility has been investigated. Finally, the electrical characteristics of 55-nm-gate-length n-channel and p-channel metal-oxide-semiconductor transistors are presented, showing a good subthreshold behavior and confirming the interest of (110) ultrathin body/box devices for low-power applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2151829