Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors

• Published in: IEEE electron device letters 2011-08, Vol.32 (8), p.1125-1127
• Main Authors: Kim, Hee-Dong, An, Ho-Myoung, Seo, Yujeong, Kim, Tae Geun
• Format: Article
• Language: English
• Subjects: AlN; Aluminum nitride; Applied sciences; Capacitors; Design. Technologies. Operation analysis. Testing; Devices; Dielectric, amorphous and glass solid devices; Electronics; Endurance; Exact sciences and technology; Indium tin oxide; Integrated circuits; Integrated circuits by function (including memories and processors); Materials; Nonvolatile memory; nonvolatile memory (NVM); Optical switches; Random access memory; Reliability; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Switching; Transmittance; transparent resistive random access memory (ReRAM) (T-ReRAM)
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2158056

This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AIN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under ±3 V/10 ns with a high-to-low resistance ratio greater than 10 2 . In the reliability test, the device showed an endurance of >; 10 8 cycles and a retention time of >; 105 s at 85°C. We believe that the AIN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.