Configuration and interaction of misfit dislocations in si1-xgex/si(001) epilayer heterostructures grown by gas-source mbe

Transmission electron microscopy has been employed to investigate dislocation configurations and interactions m Si1-xGex/Si(001) epilayer heterostructures grown by Gas-Source MBE Thick Si1-xGex/Si(001) epilayers had 3-dimensional configuration of misfit dislocations in the entire structure The main...

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Bibliographic Details
Published in:Metals and materials (Seoul, Korea) Korea), 1999-06, Vol.5 (3), p.231-235
Main Authors: Lee, Won Jae, Staton-Bevan, Anne E
Format: Article
Language:English
Subjects:
Configurations
Heterostructures
Misfit dislocations
Silicon germanides
Striations
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Summary:Transmission electron microscopy has been employed to investigate dislocation configurations and interactions m Si1-xGex/Si(001) epilayer heterostructures grown by Gas-Source MBE Thick Si1-xGex/Si(001) epilayers had 3-dimensional configuration of misfit dislocations in the entire structure The main arrays of misfit dislocations at each single Si1-xGex/Si(001) interface were along the two directions, being 60° type in character Three-way dislocation configuration, resulting from the interaction between dislocations, was observed at the interface Observation of oriented dislocations having striation lines was new in low misfit (1
ISSN:1225-9438
1598-9623
2005-4149
DOI:10.1007/BF03026072