Rapid melting dynamics of amorphous Si films

Utilizing front-side and backside time-resolved reflectance (TRR) analysis, we examine in this paper the details of excimer-laser-pulse induced melting scenarios and dynamics of as-deposited as well as ion-irradiated LPCVD a-Si films on quartz substrates. It is found that melting dynamics of as-depo...

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Bibliographic Details
Published in:Metals and materials (Seoul, Korea) Korea), 1999-12, Vol.5 (6), p.525-532
Main Authors: Yoon, Jung H, Im, James S
Format: Article
Language:English
Subjects:
Amorphous silicon
Crystallization
Excimer lasers
Excimers
Melting
Reflectance
Silicon films
Silicon substrates
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Summary:Utilizing front-side and backside time-resolved reflectance (TRR) analysis, we examine in this paper the details of excimer-laser-pulse induced melting scenarios and dynamics of as-deposited as well as ion-irradiated LPCVD a-Si films on quartz substrates. It is found that melting dynamics of as-deposited films show distinct contrast when compared to the ion-irradiated films in that the reflectance signals reveal that a buried molten layer initiates and propagates promptly upon initial formation of a thin surface liquid layer. This occurs while the surface is still being irradiated by the pulse and, therefore, can be followed by remelting of the explosively crystallized Si. The melting behavior of ion irradiated LPCVD a-Si films, in contrast, simply involves initiation and subsequent propagation of the liquid-amorphous interface. We attribute this dramatic difference to the presence in as-deposited Si films of a larger number of pre-existing crystalline Si clusters.
ISSN:1225-9438
1598-9623
2005-4149
DOI:10.1007/BF03026299