Low-Frequency Noise of nc-Si:H/c-Si Heterojunction Diodes

Low-frequency noise (LFN) measurements were performed on hydrogenated nanocrystalline silicon (nc-Si:H)/crystalline-silicon heterojunction diodes for the forward- and reverse-biased currents I . The 1/ f γ noise with γ ~ 1.3 (for low I ) or 0.6 (for high I ) was observed to dominate the LFN, and the...

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Bibliographic Details
Published in:IEEE electron device letters 2012-02, Vol.33 (2), p.251-253
Main Authors: Dai, M., Oh, J. I., Shen, W. Z.
Format: Article
Language:English
Subjects:
Applied sciences
Band tail states
carrier number fluctuations
Cross-disciplinary physics: materials science
rheology
Crystal structure
Current measurement
deep trap states
Density
Depth indicators
Diodes
Electronics
Exact sciences and technology
Fluctuation
hbox{1}/f noise
Heterojunctions
hydrogenated nanocrystalline silicon (nc-Si:H)
Laboratories
Materials science
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Noise
Noise measurement
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Spectra
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Summary:Low-frequency noise (LFN) measurements were performed on hydrogenated nanocrystalline silicon (nc-Si:H)/crystalline-silicon heterojunction diodes for the forward- and reverse-biased currents I . The 1/ f γ noise with γ ~ 1.3 (for low I ) or 0.6 (for high I ) was observed to dominate the LFN, and the noise power spectral density Si showed a power-law behavior ( Si ~ I α , where α ~ 2). This quadratic behavior may indicate the 1/ f γ noise to stem from the carrier number fluctuations mediated by deep trap states (for γ ~ 1.3) or band tail states (for γ ~ 0.6) of nc-Si:H. Also, the band tail width of nc-Si:H was estimated to be ~ 65 meV.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2176552