Improved model for single-event burnout mechanism

We describe an improved model for single-event burnout (SEB) mechanism. The model includes the direct tunneling of carriers at the interface of epitaxial layer and substrate. Compared with our previous models, the new model is more successful in reproducing the voltage dependence of the collected ch...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3336-3341
Main Authors: Kuboyama, S., Ikeda, N., Hirao, T., Matsuda, S.
Format: Article
Language:English
Subjects:
Avalanche multiplication
bipolar junction transistor (BJT)
Burnout
Charge
Electric potential
Electrodes
Emittance
energetic particle induced charge spectroscopy (EPICS)
Epitaxial layers
Fuel consumption
Heavy ions
Mathematical models
MOSFET circuits
Poisson equations
Power MOSFET
Semiconductor process modeling
single-event burnout (SEB)
Spectroscopy
Strikes
Substrates
Tunneling
Voltage
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Summary:We describe an improved model for single-event burnout (SEB) mechanism. The model includes the direct tunneling of carriers at the interface of epitaxial layer and substrate. Compared with our previous models, the new model is more successful in reproducing the voltage dependence of the collected charge when incident heavy ions strike the emitter area. The model clearly explains the reason why the emitter stripe region was more susceptible to SEBs.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2004.839512