New experimental findings for single-event gate rupture in MOS capacitors and linear devices

Mechanisms for single-event gate rupture (SEGR) in MOS capacitors and linear integrated circuits (ICs ) are explored at ion energies greater than 1 GeV. We find that SEGR thresholds depend strongly on ion energy, but are independent of oxide defects, bias polarity, doping concentration, and ionizing...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3263-3269
Main Authors: Lum, G.K., Boruta, N., Baker, J.M., Robinette, L., Shaneyfelt, M.R., Schwank, J.R., Dodd, P.E., Felix, J.A.
Format: Article
Language:English
Subjects:
Analog integrated circuits
Capacitors
Catastrophic gate oxide failure
Cross sections
Devices
Dielectric devices
dielectric gate rupture
Dielectric measurements
Doping
Electric variables measurement
Energy (nuclear)
Gates
Integrated circuit measurements
Laboratories
linear devices
Metal oxide semiconductors
MOS capacitors
MOSFETs
Rupture
Silicon
single-event gate rupture (SEGR)
Thresholds
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Summary:Mechanisms for single-event gate rupture (SEGR) in MOS capacitors and linear integrated circuits (ICs ) are explored at ion energies greater than 1 GeV. We find that SEGR thresholds depend strongly on ion energy, but are independent of oxide defects, bias polarity, doping concentration, and ionizing dose. The number of SEGR strikes across a MOS capacitor was measured, and the SEGR response cross section distinctly shows an electric field threshold. The importance of having stiffening and speedup capacitors at the device is discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2004.840262