Loading…
New experimental findings for single-event gate rupture in MOS capacitors and linear devices
Mechanisms for single-event gate rupture (SEGR) in MOS capacitors and linear integrated circuits (ICs ) are explored at ion energies greater than 1 GeV. We find that SEGR thresholds depend strongly on ion energy, but are independent of oxide defects, bias polarity, doping concentration, and ionizing...
Saved in:
| Published in: | IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3263-3269 |
|---|---|
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c351t-465fa17d9431cd8473a217bc824657b62391fe3737ddf5edd21ac08c7887e7083 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c351t-465fa17d9431cd8473a217bc824657b62391fe3737ddf5edd21ac08c7887e7083 |
| container_end_page | 3269 |
| container_issue | 6 |
| container_start_page | 3263 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 51 |
| creator | Lum, G.K. Boruta, N. Baker, J.M. Robinette, L. Shaneyfelt, M.R. Schwank, J.R. Dodd, P.E. Felix, J.A. |
| description | Mechanisms for single-event gate rupture (SEGR) in MOS capacitors and linear integrated circuits (ICs ) are explored at ion energies greater than 1 GeV. We find that SEGR thresholds depend strongly on ion energy, but are independent of oxide defects, bias polarity, doping concentration, and ionizing dose. The number of SEGR strikes across a MOS capacitor was measured, and the SEGR response cross section distinctly shows an electric field threshold. The importance of having stiffening and speedup capacitors at the device is discussed. |
| doi_str_mv | 10.1109/TNS.2004.840262 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_proquest_journals_920884261</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1369480</ieee_id><sourcerecordid>901680084</sourcerecordid><originalsourceid>FETCH-LOGICAL-c351t-465fa17d9431cd8473a217bc824657b62391fe3737ddf5edd21ac08c7887e7083</originalsourceid><addsrcrecordid>eNp9kb1PHDEQxa0oSLkAdYo0Vgqo9vDXrsclQnxJBxQcXSTLZ88io73djb0L4b_H6CIhUaSaGb3fG2nmEfKDsyXnzJysb--XgjG1BMVEI76QBa9rqHit4StZMMahMsqYb-R7zk9lVDWrF-T3Lb5Q_DtiilvsJ9fRNvYh9o-ZtkOiuXQdVvhcNProJqRpHqc5IY09vbm7p96NzsdpSJm6PtAu9ugSDfgcPeYDste6LuPhv7pPHi7O12dX1eru8vrsdFV5WfOpUk3dOq6DUZL7AEpLJ7jeeBBF0ZtGSMNblFrqENoaQxDceQZeA2jUDOQ-Od7tHdPwZ8Y82W3MHrvO9TjM2RrGG2AMVCGP_ksKUNBoLQr46xP4NMypL1dYIxiAEg0v0MkO8mnIOWFrx_JGl14tZ_Y9FFtCse-h2F0oxfFz54iI-EHLxihg8g2L2odA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>920884261</pqid></control><display><type>article</type><title>New experimental findings for single-event gate rupture in MOS capacitors and linear devices</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Lum, G.K. ; Boruta, N. ; Baker, J.M. ; Robinette, L. ; Shaneyfelt, M.R. ; Schwank, J.R. ; Dodd, P.E. ; Felix, J.A.</creator><creatorcontrib>Lum, G.K. ; Boruta, N. ; Baker, J.M. ; Robinette, L. ; Shaneyfelt, M.R. ; Schwank, J.R. ; Dodd, P.E. ; Felix, J.A.</creatorcontrib><description>Mechanisms for single-event gate rupture (SEGR) in MOS capacitors and linear integrated circuits (ICs ) are explored at ion energies greater than 1 GeV. We find that SEGR thresholds depend strongly on ion energy, but are independent of oxide defects, bias polarity, doping concentration, and ionizing dose. The number of SEGR strikes across a MOS capacitor was measured, and the SEGR response cross section distinctly shows an electric field threshold. The importance of having stiffening and speedup capacitors at the device is discussed.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2004.840262</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Analog integrated circuits ; Capacitors ; Catastrophic gate oxide failure ; Cross sections ; Devices ; Dielectric devices ; dielectric gate rupture ; Dielectric measurements ; Doping ; Electric variables measurement ; Energy (nuclear) ; Gates ; Integrated circuit measurements ; Laboratories ; linear devices ; Metal oxide semiconductors ; MOS capacitors ; MOSFETs ; Rupture ; Silicon ; single-event gate rupture (SEGR) ; Thresholds</subject><ispartof>IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3263-3269</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-465fa17d9431cd8473a217bc824657b62391fe3737ddf5edd21ac08c7887e7083</citedby><cites>FETCH-LOGICAL-c351t-465fa17d9431cd8473a217bc824657b62391fe3737ddf5edd21ac08c7887e7083</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1369480$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Lum, G.K.</creatorcontrib><creatorcontrib>Boruta, N.</creatorcontrib><creatorcontrib>Baker, J.M.</creatorcontrib><creatorcontrib>Robinette, L.</creatorcontrib><creatorcontrib>Shaneyfelt, M.R.</creatorcontrib><creatorcontrib>Schwank, J.R.</creatorcontrib><creatorcontrib>Dodd, P.E.</creatorcontrib><creatorcontrib>Felix, J.A.</creatorcontrib><title>New experimental findings for single-event gate rupture in MOS capacitors and linear devices</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>Mechanisms for single-event gate rupture (SEGR) in MOS capacitors and linear integrated circuits (ICs ) are explored at ion energies greater than 1 GeV. We find that SEGR thresholds depend strongly on ion energy, but are independent of oxide defects, bias polarity, doping concentration, and ionizing dose. The number of SEGR strikes across a MOS capacitor was measured, and the SEGR response cross section distinctly shows an electric field threshold. The importance of having stiffening and speedup capacitors at the device is discussed.</description><subject>Analog integrated circuits</subject><subject>Capacitors</subject><subject>Catastrophic gate oxide failure</subject><subject>Cross sections</subject><subject>Devices</subject><subject>Dielectric devices</subject><subject>dielectric gate rupture</subject><subject>Dielectric measurements</subject><subject>Doping</subject><subject>Electric variables measurement</subject><subject>Energy (nuclear)</subject><subject>Gates</subject><subject>Integrated circuit measurements</subject><subject>Laboratories</subject><subject>linear devices</subject><subject>Metal oxide semiconductors</subject><subject>MOS capacitors</subject><subject>MOSFETs</subject><subject>Rupture</subject><subject>Silicon</subject><subject>single-event gate rupture (SEGR)</subject><subject>Thresholds</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp9kb1PHDEQxa0oSLkAdYo0Vgqo9vDXrsclQnxJBxQcXSTLZ88io73djb0L4b_H6CIhUaSaGb3fG2nmEfKDsyXnzJysb--XgjG1BMVEI76QBa9rqHit4StZMMahMsqYb-R7zk9lVDWrF-T3Lb5Q_DtiilvsJ9fRNvYh9o-ZtkOiuXQdVvhcNProJqRpHqc5IY09vbm7p96NzsdpSJm6PtAu9ugSDfgcPeYDste6LuPhv7pPHi7O12dX1eru8vrsdFV5WfOpUk3dOq6DUZL7AEpLJ7jeeBBF0ZtGSMNblFrqENoaQxDceQZeA2jUDOQ-Od7tHdPwZ8Y82W3MHrvO9TjM2RrGG2AMVCGP_ksKUNBoLQr46xP4NMypL1dYIxiAEg0v0MkO8mnIOWFrx_JGl14tZ_Y9FFtCse-h2F0oxfFz54iI-EHLxihg8g2L2odA</recordid><startdate>20041201</startdate><enddate>20041201</enddate><creator>Lum, G.K.</creator><creator>Boruta, N.</creator><creator>Baker, J.M.</creator><creator>Robinette, L.</creator><creator>Shaneyfelt, M.R.</creator><creator>Schwank, J.R.</creator><creator>Dodd, P.E.</creator><creator>Felix, J.A.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope></search><sort><creationdate>20041201</creationdate><title>New experimental findings for single-event gate rupture in MOS capacitors and linear devices</title><author>Lum, G.K. ; Boruta, N. ; Baker, J.M. ; Robinette, L. ; Shaneyfelt, M.R. ; Schwank, J.R. ; Dodd, P.E. ; Felix, J.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-465fa17d9431cd8473a217bc824657b62391fe3737ddf5edd21ac08c7887e7083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Analog integrated circuits</topic><topic>Capacitors</topic><topic>Catastrophic gate oxide failure</topic><topic>Cross sections</topic><topic>Devices</topic><topic>Dielectric devices</topic><topic>dielectric gate rupture</topic><topic>Dielectric measurements</topic><topic>Doping</topic><topic>Electric variables measurement</topic><topic>Energy (nuclear)</topic><topic>Gates</topic><topic>Integrated circuit measurements</topic><topic>Laboratories</topic><topic>linear devices</topic><topic>Metal oxide semiconductors</topic><topic>MOS capacitors</topic><topic>MOSFETs</topic><topic>Rupture</topic><topic>Silicon</topic><topic>single-event gate rupture (SEGR)</topic><topic>Thresholds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lum, G.K.</creatorcontrib><creatorcontrib>Boruta, N.</creatorcontrib><creatorcontrib>Baker, J.M.</creatorcontrib><creatorcontrib>Robinette, L.</creatorcontrib><creatorcontrib>Shaneyfelt, M.R.</creatorcontrib><creatorcontrib>Schwank, J.R.</creatorcontrib><creatorcontrib>Dodd, P.E.</creatorcontrib><creatorcontrib>Felix, J.A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lum, G.K.</au><au>Boruta, N.</au><au>Baker, J.M.</au><au>Robinette, L.</au><au>Shaneyfelt, M.R.</au><au>Schwank, J.R.</au><au>Dodd, P.E.</au><au>Felix, J.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>New experimental findings for single-event gate rupture in MOS capacitors and linear devices</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2004-12-01</date><risdate>2004</risdate><volume>51</volume><issue>6</issue><spage>3263</spage><epage>3269</epage><pages>3263-3269</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Mechanisms for single-event gate rupture (SEGR) in MOS capacitors and linear integrated circuits (ICs ) are explored at ion energies greater than 1 GeV. We find that SEGR thresholds depend strongly on ion energy, but are independent of oxide defects, bias polarity, doping concentration, and ionizing dose. The number of SEGR strikes across a MOS capacitor was measured, and the SEGR response cross section distinctly shows an electric field threshold. The importance of having stiffening and speedup capacitors at the device is discussed.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2004.840262</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3263-3269 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_proquest_journals_920884261 |
| source | IEEE Electronic Library (IEL) Journals |
| subjects | Analog integrated circuits Capacitors Catastrophic gate oxide failure Cross sections Devices Dielectric devices dielectric gate rupture Dielectric measurements Doping Electric variables measurement Energy (nuclear) Gates Integrated circuit measurements Laboratories linear devices Metal oxide semiconductors MOS capacitors MOSFETs Rupture Silicon single-event gate rupture (SEGR) Thresholds |
| title | New experimental findings for single-event gate rupture in MOS capacitors and linear devices |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T19%3A18%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=New%20experimental%20findings%20for%20single-event%20gate%20rupture%20in%20MOS%20capacitors%20and%20linear%20devices&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Lum,%20G.K.&rft.date=2004-12-01&rft.volume=51&rft.issue=6&rft.spage=3263&rft.epage=3269&rft.pages=3263-3269&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2004.840262&rft_dat=%3Cproquest_ieee_%3E901680084%3C/proquest_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c351t-465fa17d9431cd8473a217bc824657b62391fe3737ddf5edd21ac08c7887e7083%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=920884261&rft_id=info:pmid/&rft_ieee_id=1369480&rfr_iscdi=true |