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Charge trapping in irradiated SOI wafers measured by second harmonic generation
Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the co...
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Published in: | IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3231-3237 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements. |
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ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/TNS.2004.839140 |